Simulation of Cross-Gain Modulation in Semiconductor Optical Amplifiers

This simulation models cross-gain modulation in semiconductor optical amplifiers, applicable for both bulk-SOAs and quantum-dot SOAs (QD-SOAs). By adjusting parameters such as carrier lifetime, injection current, and material-specific gain coefficients, the model can simulate both amplifier types and further investigate their performance characteristics. The core algorithm typically implements coupled differential equations for carrier density and photon density evolution, incorporating spectral hole burning effects for QD-SOAs. Cross-gain modulation serves as a critical technique for signal processing and transmission in optical communication systems, enabling wavelength conversion and signal regeneration functions. Therefore, simulating and analyzing cross-gain modulation in semiconductor optical amplifiers constitutes valuable research for optimizing photonic network performance. Key computational aspects include solving rate equations numerically using methods like Runge-Kutta integration and implementing wavelength-dependent gain models through effective band structure calculations.