Analysis and Modeling of Physical Processes and Phenomena in Thin Film Formation and Growth

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Resource Overview

1. Analysis and modeling of physical processes and phenomena in thin film formation and growth. 2. Computer simulation of thin film formation and growth processes using Monte Carlo and Molecular Dynamics methods, including implementation of stochastic algorithms for deposition events and force-field calculations for atomic interactions. 3. Simulation of porous silicon formation, focusing on etching mechanisms and surface morphology evolution through specialized boundary conditions.

Detailed Documentation

This research aims to conduct a comprehensive analysis and modeling of physical processes and phenomena involved in thin film formation and growth. We will employ Monte Carlo methods, implementing stochastic algorithms to simulate random deposition events and surface diffusion, alongside Molecular Dynamics approaches that calculate atomic interactions using force fields like Lennard-Jones potentials to model growth kinetics. Additionally, the study will focus specifically on simulating porous silicon formation, where we'll implement etching algorithms and surface reaction models to investigate formation mechanisms. Through this research, we seek to gain deeper insights into the physical processes governing thin film formation and growth, providing more detailed theoretical support for related research fields through validated computational models.

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